Search results for "effect [kinematics]"
showing 10 items of 137 documents
Electrical excitation of surface plasmons by an individual carbon nanotube transistor.
2013
We demonstrate here the realization of an integrated, electrically driven, source of surface plasmon polaritons. Light-emitting individual single-walled carbon nanotube field effect transistors were fabricated in a plasmonic-ready platform. The devices were operated at ambient conditions to act as an electroluminescence source localized near the contacting gold electrodes. We show that photon emission from the semiconducting channel can couple to propagating surface plasmons developing in the electrical terminals. Our results show that a common functional element can be operated for two different platforms emphasizing thus the high degree of compatibility between state-of-the-art nano-optoe…
Carbon Nanotube Radio-Frequency Single-Electron Transistor
2004
We discuss the theory of the radio-frequency single-electron transistor and the measurements that use multiwalled carbon nanotubes as active elements. Our devices made of plasma-enhanced chemical-vapor-deposition nanotubes yield charge sensitivities of 10-20 μe/ $$\sqrt {Hz}$$ . PACS numbers: 73.23.Hk, 73.63.Fg, 85.35.Gv, 85.35.Kt.
Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures
2017
Molybdenum disulphide (MoS2) is currently regarded as a promising material for the next generation of electronic and optoelectronic devices. However, several issues need to be addressed to fully exploit its potential for field effect transistor (FET) applications. In this context, the contact resistance, RC, associated with the Schottky barrier between source/drain metals and MoS2 currently represents one of the main limiting factors for suitable device performance. Furthermore, to gain a deeper understanding of MoS2 FETs under practical operating conditions, it is necessary to investigate the temperature dependence of the main electrical parameters, such as the field effect mobility (μ) an…
The lower rather than higher density charge carrier determines the NH 3 -sensing nature and sensitivity of ambipolar organic semiconductors
2018
International audience; Despite the extensive studies and great application potentials, the sensing nature of ambipolar organic semiconductor gas sensors still remains unclarified, unlike their inorganic counterparts. Herein, different numbers of thiophenoxy groups are introduced into the phthalocyanine periphery of bis(phthalocyaninato) rare earth semiconductors to continuously tune their HOMO and LUMO energies, resulting in the ambipolar M[Pc(SPh)(8)](2) [M = Eu (1), Ho (2)] and p-type M(Pc)[Pc(SPh)(8)] [M = Eu (3), Ho (4)]. An OFET in combination with direct I-V measurements over the devices from the self-assembled nanostructures of 1-4 revealed the original electron and hole densities (…
Predictive dead time controller for GaN-based boost converters
2017
A dynamic dead time controller is presented, specifically intended to operate in synchronous boost converters based on GaN field-effect transistor switches. These transistors have a reduced stored charge with respect to silicon metal–oxide–semiconductor field-effect transistors with similar breakdown voltage and series resistance, and can operate at higher frequencies with reduced switching losses. On the other hand, the voltage drop in reverse conduction is typically more than doubled with respect to silicon devices resulting in relevant power losses during the free-wheeling phases. Therefore, dynamic control of dead time can be profitably applied even in converters operating in the tens o…
Failure Estimates for SiC Power MOSFETs in Space Electronics
2018
Silicon carbide (SiC) power metal-oxide-semiconductor field effect transistors (MOSFETs) are space-ready in terms of typical reliability measures. However, single event burnout (SEB) due to heavy-ion irradiation often occurs at voltages 50% or lower than specified breakdown. Failure rates in space are estimated for burnout of 1200 V devices based on the experimental data for burnout and the expected heavy-ion linear energy transfer (LET) spectrum in space. peerReviewed
Outlier detection to hierarchical and mixed effects models
2008
Hierarchical and mixed effects models are models where a varying number of coefficients may be random at different levels of the hierarchy. The purpose of outlier analysis for these models is to determine whether an outlying unit at higher level is entirely outlying, or outlying due to effect of one or a few aberrant lower level units. Most works on diagnostics for these complex models have focused on the mixed model rather than on the hierarchical models, obscuring some relevant aspects of the hierarchical model. In this paper we will present an approach to influence analysis and outlier detection for mixed and hierarchical model, focusing on the special structure of nested data that these…
Negative differential resistance in carbon nanotube field-effect transistors with patterned gate oxide.
2010
We demonstrate controllable and gate-tunable negative differential resistance in carbon nanotube field-effect transistors, at room temperature and at 4.2 K. This is achieved by effectively creating quantum dots along the carbon nanotube channel by patterning the underlying, high-kappa gate oxide. The negative differential resistance feature can be modulated by both the gate and the drain-source voltage, which leads to more than 20% change of the current peak-to-valley ratio. Our approach is fully scalable and opens up a possibility for a new class of nanoscale electronic devices using negative differential resistance in their operation.
High-Yield of Memory Elements from Carbon Nanotube Field-Effect Transistors with Atomic Layer Deposited Gate Dielectric
2008
Carbon nanotube field-effect transistors (CNT FETs) have been proposed as possible building blocks for future nano-electronics. But a challenge with CNT FETs is that they appear to randomly display varying amounts of hysteresis in their transfer characteristics. The hysteresis is often attributed to charge trapping in the dielectric layer between the nanotube and the gate. This study includes 94 CNT FET samples, providing an unprecedented basis for statistics on the hysteresis seen in five different CNT-gate configurations. We find that the memory effect can be controlled by carefully designing the gate dielectric in nm-thin layers. By using atomic layer depositions (ALD) of HfO$_{2}$ and T…
Three-dimensional Hall effect accelerometer for recording head movements of freely moving laboratory animals
1991
A Hall effect device was constructed for a measurement of head movements in three spatial dimensions during classical conditioning experiments in cats. A Hall sensor was used to detect movements of a magnetic fragment floating in a small (15 x 15 mm) cube. The magnetic fragment was kept in the centre of the sealed cube with a thin coil spring which was filled with thin oil for damping excessive afteroscillations. A comparison of this device to a commercial accelerometer showed that the accuracy of the Hall device is sufficient for the movement recordings and that the device is sensitive also to slowly accelerating movements. The construction is compact and can be easily mounted, for example…